Intel Flash芯片 i28f160,i28f320:

　

i28F320B: 64*64K,64个blocks,4M空间,每个block 64K,第一个64K由8个8*8K小blocks组成.

每个Black可以被独立擦写(寿命周期) 100,000次以上

Flash操作的大概步骤:

flash读写操作中,读应该很简单,和RAM一样,写就复杂一点.  
Intel  TE28F320C3的flash是4M空间
flash空间,划分成许多的block,Intel  TE28F320C3的flash是4M空间,64个block,每个block由64K.
要对所有的block单独进行操作,  每个操作结束,都需要判断状态,  
每个block操作的大概步骤如下:  
1.unlock  
2.erase  
3.check  empty  
所有的block完成上述操作,且状态正确,才能进行下一步,写  
4.write  

ARM汇编程序

          LDR r2,  =FlashBase                                        ;Flash起始地址

//第一步,UNLOCK的64个block,步骤和上边一样

                   MOV r1,#63                                           ;63x64k  block 计数  

01        LDRB     r3,  =X16_FLASH_COMMAND_CONFIG_SETUP

                   STRB                   r3,  [r2]                    ;该block的首地址    

                   LDRB                    r3,  =X16_FLASH_COMMAND_UNLOCK_BLOCK

                   STRB                   r3,  [r2]                   ;将Unlock命令写入

                   ADD r2,  r2,  #0x10000                        ;64K
                   SUBS                   r1,  r1,  #1
                   BNE %b01                                                       
;Unlock  OK                                                               ;Unlock 完成

//第二布,擦除blocks

               LDR                r0, =FlashBase
               LDR                r1,=63                                           ;擦除 63x64k block
01       LDR         r3, =X16_FLASH_COMMAND_ERASE
               LDR         r2, =X16_FLASH_COMMAND_CONFIRM      
               ORR                r3, r3, r2, LSL #16
               STR                r3, [r0]
               LDR         r3, =X16_FLASH_COMMAND_STATUS  ;检查寄存器状态
               STRB       r3, [r0]
02       LDRB       r3, [r0]                                                         ;读状态
               TST                r3, #X16_FLASH_STATUS_READY  
               BEQ         %b02                                                  ;若状态ready,执行下一个     
               TST         r3, #X16_FLASH_STATUS_ERROR
               BNE         error_erase_block
               ADD                r0, r0, #0x10000
               SUBS       r1, r1, #1
               BNE                %b01
               B                EraseOK
error_erase_block
..............
;EraseOK                                                            ;擦除完成

//第三步,检查flash是否为空

;Check Flash Empty
               LDR                r4, =FlashBase
               LDR                r5, =0x100000                                     ;检查 1MB
               LDR                r0, =0xffffffff
loop_1
               LDR                r1, [r4]
               CMP                r1, r0                                        ;比较地址内容和0xffffffff
               BNE                empty_error
             ADD                r4, r4, #4
               CMP                r4, r5
               BLO                loop_1
               B                CheckOK
empty_error
.................
CheckOK
.................

;Check empty OK                                              ;检查完成   

//第四步,写flash

;Burn data to Flash ROM

               LDR                r6, =Length_Flash                     ;定义数据长度
               LDR                r0, =FlashBase
               LDR                r1, =BufferBase
               MOV                r9, #0
               LDR                r4,=0x10000000
               LDR                r7,=0xc0001000
               STR                r4,       [r7]
               LDR                r1, [r1, r9]

03       LDR         r3, =X16_FLASH_COMMAND_WRITE
               STRB       r3, [r0]                                                                               ;把写命令放入Block首地址
             LDR         r3, =X16_FLASH_COMMAND_STATUS      
               LDR                r2, [r7]                                                                                  
               LDR                r5, =0x0000ffff                        
               AND                r2, r2, r5
               ORR                r2, r2, r3, LSL #16
               STR                r2, [r0]               
02       LDR                r3, [r0]                                                               ;读状态寄存器状态
               TST                r3, #X16_FLASH_STATUS_READY      
               BEQ         %b02                                                  ;若状态ready,执行下一个

               LDR         r3, =X16_FLASH_COMMAND_WRITE
               LDR                r2, [r7]                       
              LDR                r5, =0xffff0000                                                       ;
               AND                r2, r2, r5
               ORR                r3, r3, r2
               STR                r3, [r0]

               LDR         r3, =X16_FLASH_COMMAND_STATUS
               STRB       r3, [r0]                       
02       LDR                r3, [r0]                                                        ; read status
               TST                r3, #X16_FLASH_STATUS_READY
               BEQ         %b02

               LDR         r4, =X16_FLASH_COMMAND_READ
               STRB       r4, [r0]
               ADD                r0, r0, #4
               LDR                r8, [r7]
               ADD                r8, r8,#1
               STR                r8, [r7]
               ADD                r8, r8, #4
writenext

               SUBS         r6, r6, #4                ;if no finished goto 03
               BHI                %b03
               TST         r3, #X16_FLASH_STATUS_ERROR
               BNE         error_write
               LDR         r3, =X16_FLASH_COMMAND_READ
               STRB       r3, [r0]
               B                BurnOK
error_write
       ..........
BurnOK